http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6043154-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b8d5a2e15be7c8530fb2dd77ca73f9bb |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-82 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 1998-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60467311c3e56e45ae3f25c71fcb8bf0 |
| publicationDate | 2000-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-6043154-A |
| titleOfInvention | Method for manufacturing charge storage electrode |
| abstract | A method for manufacturing a charge storage electrode that utilizes the tendency for implanted phosphorus ions in a hemispherical grain (HSG) polysilicon layer to gather near the grooves so that the rate of oxidation there increases. Utilizing this property, a solution including an oxidizing agent and an etching agent mixed in a specified ratio is employed to etch the hemispherical grained polysilicon layer so that the grooves in the hemispherical polysilicon layer is deepened. Therefore, the surface area of the charge storage electrode is increased, and hence capacitance of the charge storage structure becomes greater. Moreover, the method used in this invention is compatible with the conventional processes and can be produced in batches. Therefore, production cost is low. |
| priorityDate | 1997-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.