| abstract |
A filtered cathodic vacuum arc is used as a source of metal to generate a highly directional beam of metal ions having substantially larger velocity parallel to the axis of the beam (perpendicular to the surface of the target) than perpendicular to the axis of the beam. This ion beam, with energies ranging up to 80 eV, is used to deposit metal into the bottom of high aspect (typically greater than 3 to 1) openings, for example, to deposit titanium in the bottom of deep contact holes in semiconductor devices or to deposit molybdenum to form tips for emitters for a field emission display. Gases can be introduced into the vacuum deposition chamber during deposition to change the nature of the deposit. The substrate or target bias can be adjusted to control the deposition rate. |