http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6010918-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J3-02
filingDate 1998-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2000-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b7a1e9412ea1288d1908dfe83299964
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91ca4a43b36fc765c0278e85de30a081
publicationDate 2000-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6010918-A
titleOfInvention Gate electrode structure for field emission devices and method of making
abstract Field emission devices may include emitter wells formed in a body of dielectric material. A gate conductor may be provided along the upper surface of the dielectric material. A gate hole may be provided in the gate conductor directly above each of the emitter wells. A method for forming the gate holes and emitter wells is disclosed. The method includes the steps of providing a first gate conductor layer on a dielectric layer. A pattern of second gate conductor material may be formed over the first gate conductor layer, said pattern defining gate holes in the second gate conductor material. The gate holes may then be completed and emitter wells formed by etching through the first gate conductor layer and into the dielectric layer using an etch that selectively etches the first gate conductor layer and the dielectric layer, and does not etch substantially the second gate conductor material.
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Total number of triples: 50.