http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5973187-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C309-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C309-65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C309-66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C309-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C309-65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C309-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C307-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 |
| filingDate | 1998-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9770ede2c7568ae0bf849c7ad5b9ddab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbedb1a5039de4a4d2212c916ad759ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4900f5107982c3eaa801f05ac37a016 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6905dfe8fddb653e9dc31517dbe6027b |
| publicationDate | 1999-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-5973187-A |
| titleOfInvention | Positive-working chemical-sensitization photoresist composition |
| abstract | Disclosed is a novel positive-working or negative-working chemical-sensitization photoresist composition useful in the photolithographic patterning works for the manufacture of electronic devices. The photoresist composition is characterized by a unique acid-generating agent capable of releasing an acid by the pattern-wise exposure of the resist layer to actinic rays so as to increase or decrease the solubility of the resist layer in an aqueous alkaline developer solution. The acid-generating agent proposed is a novel cyano group-containing oxime sulfonate di- or triester compound represented by the general formula n n A[C(CN)═N--O--SO.sub.2 --R].sub.n, n n in which each R is, independently from the others, an unsubstituted or substituted monovalent hydrocarbon group such as alkyl groups, A is a divalent or tervalent organic group or, preferably, phenylene group and the subscript n is 2, when A is a divalent group, or 3, when A is a tervalent group or, preferably 2. Since more than one of sulfonic acid molecules are released from one molecule of the sulfonate compound by the exposure to actinic rays, the chemical-sensitization photoresist composition exhibits high photosensitivity. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6365263-B1 |
| priorityDate | 1996-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 207.