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filingDate 1997-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1999-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c520b4bd85321eb9f1428ea63990c04
publicationDate 1999-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5948705-A
titleOfInvention Method of forming interconnection line
abstract A method of forming an interconnection line of a semiconductor device includes the steps of forming an insulating layer on a substrate, forming a contact hole in the insulating layer, forming a first conductive material layer in the contact hole so that a top surface level of the first conductive material layer is the same as or higher than a top surface level of the insulating layer and so that a portion of the first conductive material layer remains on the insulating layer, and forming a second conductive material layer on the first conductive material layer as the portion of the first conductive material layer remaining on the insulating layer is removed.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6509266-B1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006051969-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7202497-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002000613-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7403238-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004092059-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007161236-A1
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Total number of triples: 37.