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filingDate 1998-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1999-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a172744f3c845d7141a981d97633d7ae
publicationDate 1999-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5945259-A
titleOfInvention Method for lead frame etching
abstract A lead frame etching method, which is used for a semiconductor device assembling process and prevents a sharp-edged portion formed on each lateral end of a lead frame material. The method includes the steps of forming a first photoresist pattern defining the actual etching region, on both surfaces of a lead frame material, forming a second photoresist pattern as an etching buffer extending from lateral ends of the first photoresist pattern, on both surfaces of the lead frame material on which the first photoresist pattern is formed, etching the lead frame material using the second photoresist pattern as an etching mask, removing the second photoresist pattern from the etched lead frame material, etching the lead frame material using the first photoresist pattern as an etching mask, and removing the first photoresist pattern from the twice-etched lead frame material.
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priorityDate 1997-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 34.