| abstract |
The attenuated phase shift mask in accordance with one embodiment of the present invention for use in lithography at or below 0.20 mu m and for use at wavelengths below 300 nm includes a substrate, a first layer disposed on the substrate, and a second layer disposed on the first layer. The first layer is a group IV, V or VI transitional metal nitride and the second layer is SixNy or the first layer is SixNy and the second layer is a group IV, V or VI transitional metal nitride. The mask may include a third layer disposed on the second layer and a fourth layer disposed on the second layer. The third layer is a group IV, V or VI transitional metal nitride if the second layer is SixNy and is SixNy if the second layer is a group IV, V or VI transitional metal. The fourth layer is a group IV, V or VI transitional metal nitride if the third layer is SixNy and is SixNy if the third layer is a group IV, V or VI transitional metal. The attenuated phase shift mask has a thickness between about 500 angstroms and 2000 angstroms, with the ratio of the thickness of the SixNy to the group IV, V or VI transitional metal nitride being about 85 to 15. |