| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2c78d80e9d323ad7c79518c80e0b8d16 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
1997-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1999-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe8de19fac52da439304b863803b91f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f196c7a25617796a3e017439403a8d43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54f9f8471c4f04d9b1b3d35026fd1066 |
| publicationDate |
1999-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5930677-A |
| titleOfInvention |
Method for reducing microloading in an etchback of spin-on-glass or polymer |
| abstract |
A method for forming a planarized interlevel dielectric layer without degradation due to the microloading effect from spin-on material etchback is described. A patterned first conducting layer is provided over an insulating layer on a semiconductor substrate. An improved interlevel dielectric layer is formed overlying the patterned first conducting layer by the following steps. A first oxide layer is deposited overlying the patterned first conducting layer and the insulating layer. A spin-on material layer is coated overlying the first oxide layer and etched back using O 2 gas added to the CHF 3 /CF 4 chemistry until the first oxide layer is exposed overlying the patterned first conducting layer wherein microloading effects from the etching back of the spin-on material layer are lower than microloading effects in a conventional interlevel dielectric layer. A second oxide layer is deposited to complete the interlevel dielectric layer. A second conducting layer is deposited over the interlevel dielectric layer and patterned to complete the fabrication of the integrated circuit device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6511923-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013183458-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6294471-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6255232-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6898561-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113113302-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6017780-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9150963-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6495469-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100372096-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102157452-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102157452-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6277732-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009004769-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6818555-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004067633-A1 |
| priorityDate |
1997-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |