| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0928 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
1997-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1999-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eaac83c511c8fb00976ec867c32ef341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d3cf84c386305a9a6cd8e99e269e990
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b42bb6cb6200949ec9bcc6f207844c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a714d694715f0b77e5adf2304fb8da89 |
| publicationDate |
1999-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5913122-A |
| titleOfInvention |
Method of making high breakdown voltage twin well device with source/drain regions widely spaced from FOX regions |
| abstract |
An FET semiconductor device comprises a doped silicon semiconductor substrate having surface. The substrate being doped with a first type of dopant. An N-well is formed within the surface of the P-substrate. A P-well is formed within the N-well forming a twin well. Field oxide regions are formed on the surface of the substrate located above borders between the wells and regions of the substrate surrounding the wells. A gate electrode structure is formed over the P-well between the field oxide regions. A source region and a drain region are formed in the surface of the substrate. The source region and the drain region are self-aligned with the gate electrode structure with the source region and the drain region being spaced away from the field oxide regions by a gap of greater than or equal to about 0.7 μm. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010072575-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6368916-B1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6110803-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008136499-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011095368-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7797655-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008135905-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9406601-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8519480-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8146037-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8633547-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018175215-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009313591-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7608897-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11456176-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008246110-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10868198-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7645664-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7645673-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7863688-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008121941-A1 |
| priorityDate |
1997-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |