| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-904
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T436-25375
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T436-25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T436-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T436-255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-953
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B25-234 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N1-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G21H5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01T1-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N31-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B25-234 |
| filingDate |
1996-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1999-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9e258a4280034648f4d8009fe9fb39e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5399de24cab3f25b5bb44690a9e05805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb4191001e8d91f1286e9158170bc098 |
| publicationDate |
1999-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5910257-A |
| titleOfInvention |
Process for producing a semiconductor device using purified phosphoric acid |
| abstract |
A process for the preparation of an analytical sample characterized by depositing and separating solely the impurity to be analyzed from phosphoric acid; a process for analysis of the impurity characterized by depositing and separating solely the impurity from phosphoric acid and applying the separated material to analysis; a process for preparation of high grade phosphoric acid characterized by depositing and separating solely the impurity from phosphoric acid to be purified; a process for the fabrication of a semiconductor device characterized by using phosphoric acid, the impurity content of which is not more than 10-3 Bq/mL, defined by the concentration of a contained radioactive element selected from the group consisting of Pb, Bi and Po, as a processing solution. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6642147-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012015523-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011217848-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10096480-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1970349-A3 |
| priorityDate |
1995-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |