| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b73bb5b611ad02b686a7967bc6ca3412 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49123 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02G15-188
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02G1-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02G15-064
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02G15-103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02G15-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02G15-184 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02G15-064
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02G15-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02G1-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02G15-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02G15-184
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02G15-103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02G15-188 |
| filingDate |
1998-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1999-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ee2066478e33a6d3f31e85e74b6a343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_972971e73146ad3cfae2dc781bb9ff6a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfaacc0a89f535e43605bd7a19d2ef3a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ecf06d27d7409dcc41c2b9321dc587b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fc1082cce645232a58134e4a332f8bf |
| publicationDate |
1999-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5885651-A |
| titleOfInvention |
Method for altering cable semiconductive layer |
| abstract |
A method of altering a portion of the semiconductive layer of an electric power cable, to increase its resistance so as to render it electrically insulative. The semiconductive layer is loaded with carbon powder which forms chains to provide conductive pathways through the layer. By introducing an intercalant into the semiconductive layer, which causes the layer to swell, the conductive pathways are interrupted and the material is rendered insulative (>104 OMEGA -cm). The intercalant may be a polymerizable material with a curing agent which is cured in situ, i.e., without removing the semiconductive layer from the cable. By this method, flashover to the semiconductive layer at a cable splice or termination may be prevented without requiring tedious removal of the exposed portion of the semiconductive layer. The method is usable with both strippable and coextruded semiconductive layers. |
| priorityDate |
1996-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |