http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5867034-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2648 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 1997-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f884da7faa282347d3b2bc5470290f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_417d26e0fa869203ad826a4217ec0a7d |
| publicationDate | 1999-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-5867034-A |
| titleOfInvention | Non-destructive method and apparatus for monitoring carrier lifetime of a semiconductor sample during fabrication |
| abstract | A non-destructive method for monitoring the carrier lifetime characteristic of a fabricated semiconductor sample during the fabrication process, where selected materials are deposited on a planar surface of a wafer substrate in a fabrication chamber, employs one or more viewports in the walls of a fabrication chamber, thus avoiding any alteration of the fabrication process. A focused electromagnetic wave is generated external to the fabrication chamber, and directed through a viewport to impinge upon a selected portion of the planar surface of the wafer substrate at an oblique incident angle relative to the planar surface of the wafer substrate. In turn, a reflected electromagnetic wave emanating from the planar surface of the wafer substrate is detected. A light source, also external to the fabrication chamber, generates light directed at the wafer substrate through a viewport. The light is intended to have wavelength components capable of generating hole-electron pairs in the wafer substrate. In turn, the dynamic response of the reflected electromagnetic wave, in response to the light being changed from a light on condition to a light off condition, is utilized for determining a quantity indicative of the carrier lifetime characteristic of the fabricated semiconductor sample. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8912799-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006044641-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7158284-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013169283-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6441634-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010283496-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102005010582-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005162153-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7106049-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8581613-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6856159-B1 |
| priorityDate | 1997-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.