| abstract |
A chemical transport process which is enhanced by a plasma formed in a substantially oxygen free hydrogen environment for formation of microcrystalline diamond films at a relatively low deposition temperature and a rate of about 1 mu m/hr. The process, performed at 80 to 180 Torr and a current density of about 1 amp/cm2 of substrate, can be scaled to deposit films on large areas. The invention further comprises doped diamond films produced by the process, said product having a well-faceted microcrystalline structure with x-ray diffraction pattern and Raman spectra indicative of a predominately diamond structure. The doped diamond films can function as n-type and p-type semiconductors. |