| abstract |
A wiring layer formed on a field insulating film covering the surface of a semiconductor substrate is covered with an interlayer film. The interlayer film is covered with a flat film such as spin-on-glass formed by spin coating. The flat film has, for example, a laminated structure of an organic SOG film and an inorganic SOG film. The inorganic SOG film is suitable for obtaining a polishing speed generally equal to that of a CVD oxide film. The insulating film and the flat film are chemical-mechanical polished at a same polishing speed until the flat film is thoroughly removed, to leave a planarized insulating film. |