| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b77647c445c4bb5e3d4ac35b510d008d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 |
| filingDate |
1995-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1997-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a25a104d60c93a9ce9415501fcdbdbf1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26503ce3654568a5a405f33e6dc784a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db19cf8ffdf9df7fa1a4033a6ac9dc33 |
| publicationDate |
1997-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5700526-A |
| titleOfInvention |
Insulator deposition using focused ion beam |
| abstract |
Methods are provided for depositing insulator material at a pre-defined area of an integrated circuit (IC) by: placing an IC in a vacuum chamber; applying to a localized surface region of the integrated circuit at which insulator material is to be deposited a first gas containing molecules of a dissociable compound comprising atoms of silicon and oxygen and a second gas containing molecules of a compound which reacts with metal ions; generating a focused ion beam having metal ions of sufficient energy to dissociate molecules of the first gas; and directing the focused ion beam at the localized surface region to dissociate at least some of the molecules of the first gas and to thereby deposit on at least a portion of the localized surface region a material containing atoms of silicon and oxygen. The dissociable compound comprises atoms of carbon and hydrogen, such as di-t-butoxydiacetoxy-silane. The compound which reacts with metal ions may be carbon tetrabromide or ammonium carbonate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6957624-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003198755-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006252255-A9
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005252453-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8455822-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2624279-A1 |
| priorityDate |
1995-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |