| abstract |
A method of forming a SOI device layer on an oxide layer on top of a substrate is disclosed. The process involves using a device substrate of a first conductivity having a top device layer of a second conductivity. Optionally, a thin layer of silicon dioxide is formed on top of the device layer. A carrier substrate is selected with a surface layer of silicon dioxide. Patterns are etched into the device and carrier substrates to preselected depths and surface widths, in a roughly complementary manner. The etched surfaces present a slope which enables the easy assembly of the device substrate and carrier substrate, the depths of the complementary patterns are controlled by the dopant layer thickness, and the slopes of etched profile are determined by the crystallographic orientations of the silicon substrate. The device substrate is thinned away to leave the device layer over the carrier substrate, thereby forming a device layer on the carrier substrate, separated by a silicon dioxide layer. |