| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
1995-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1997-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95fffffcf02e4782af0b68ea7856ce54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c227385de57a4cdfddedb2fc25019f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cdd139ea6e212b050c54fc6f2246ed9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f1fd4f66e77638c1ec64b86fb23ecdf |
| publicationDate |
1997-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5658711-A |
| titleOfInvention |
Method of forming micropatterns |
| abstract |
A relatively thick metal oxide film of 100 nm or more is formed in the exposed portion of a resist film by supplying water and a metal alkoxide thereto, and then evaporating the alcohol generated by the supply of metal alkoxide to form a precise resist pattern from the metal oxide film. Water is absorbed into the exposed portion of the resist film in which the acid has been generated and the water is diffused deeper into the surface thereof. The growth of the metal oxide film proceeds toward the interior of the resist film. The water absorbed by the resist film is prevented from being evaporated, thereby forming a metal oxide film with a sufficiently large thickness to withstand dry etching. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11315798-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11294278-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7763549-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11262495-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017176282-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006223318-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11173649-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5928840-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11262650-B1 |
| priorityDate |
1994-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |