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filingDate 1994-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1997-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5650918-A
titleOfInvention Semiconductor device capable of preventing occurrence of a shearing stress
abstract Conductive thermoplastic adhesive masses are formed on conductor lines on a substrate. A chip has an integrated circuit, first and second chip surfaces, and conductor bumps connected to the integrated circuit and protruded from the first chip surface. The conductor bumps are glued to the conductor lines by the conductive thermoplastic adhesive masses. A thermoplastic adhesive layer is formed on the second chip surface. A sealing thermoplastic adhesive mass is formed on the substrate. A sealing cap has an under end surface, an internal wall surface, and an internal upper surface. The internal wall and upper surfaces define a hole which receives the chip with the internal upper surface glued to the second chip surface by the thermoplastic adhesive layer and with the under end surface glued to the substrate by the sealing thermoplastic adhesive mass.
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Total number of triples: 63.