http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5645887-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_05a31d15146049253ebe5354fed884ea
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76889
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 1995-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1997-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdd7c6e8dd86fd9c8dddd72b51e9d452
publicationDate 1997-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5645887-A
titleOfInvention Method for forming platinum silicide plugs
abstract A method for forming platinum silicide plugs suitable for use in very large scale integrated semiconductor devices having large aspect ratios. The method includes the steps of: providing a silicon substrate on which a conductive layer is formed; forming an insulating layer on the silicon substrate and the conductive layer; patterning the insulating layer to form a contact hole on the conductive layer; exposing the conductive layer to air to thereby form a thin native oxide layer on the conductive layer; forming a blanket polysilicon film on the entire resulting structure thick enough to completely fill the contact hole; etching back the blanket polysilicon film to expose the insulating layer, thereby forming a silicon plug in the contact hole; forming a platinum layer on the silicon plug and the insulating layer; performing heat treatment to thereby convert the silicon plug to a platinum silicide plug; and thereafter removing the remaining platinum layer.
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Total number of triples: 50.