| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3171
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31 |
| filingDate |
1994-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1996-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a398b3dc116dd01f214736086a812dee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7741dceba3a5e079e106e46d0699b0ea |
| publicationDate |
1996-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5578517-A |
| titleOfInvention |
Method of forming a highly transparent silicon rich nitride protective layer for a fuse window |
| abstract |
An integrated circuit includes a conductive fusible link that may be blown by heating with laser irradiation. The integrate circuit comprises: a silicon substrate; a first insulating layer; a fusible link on the first layer; a second insulating layer overlying the first layer and the fusible link; an opening through the second layer exposing the fuse; and a protective layer over the surfaces of the opening. A laser beam is irradiated through the opening and the protective layer to melt the fusible link. The protective layer is highly transparent to a laser beam and does not interfere with the laser melting (trimming) operation. Moreover, the protective layer prevents contaminates from diffusing in through the opening to harm adjacent semiconductor devices. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7282453-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6130468-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7315074-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007117390-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6879018-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6017824-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6384467-B1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005158919-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009267181-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005218474-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6489244-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005221540-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6057206-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5652175-A |
| priorityDate |
1994-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |