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filingDate 1994-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1996-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1996-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5569499-A
titleOfInvention Method for reforming insulating film
abstract A method for reforming an insulating film such as a BSG film formed by a CVD technique. The method reduces the parasitic capacitance between conductor layers having an intervening film, especially a BSG film, and includes the steps of depositing a BSG film on a substrate from a gaseous source and exposing the BSG film to a reforming gas plasma.
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Total number of triples: 44.