| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-01 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7322 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 |
| filingDate |
1995-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1996-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9196fbf98b705c347a6c9cec052d65bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d56c00ee0b494ac82f7e01472031bf6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d84f9f79a1bb5d8bba1523f2435aa452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_926d580c1b30d6daa1f0e0f76e43d62b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b22daa7a2c6b4850e42419945454b69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75e1672f14c90c5e752bced48bea87a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b100bdb7f7498446220a8402211ca915
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_518dc3c25efd1074f22328c0e153c8b4 |
| publicationDate |
1996-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5541124-A |
| titleOfInvention |
Method for making bipolar transistor having double polysilicon structure |
| abstract |
A semiconductor device and a manufacturing method therefor which can simultaneously realize both a reduction in base transit time by a reduction in base width and a reduction in base resistance by a reduction in link base resistance. The semiconductor device is manufactured by the method including the steps of forming a first impurity diffused layer of a first conduction type in a semiconductor substrate; forming a conducting film connected to the first impurity diffused layer; forming a first insulating film on the conducting film; forming a first hole through a laminated film composed of the first insulating film and the conducting film; forming a second impurity diffused layer of the first conduction type in the semiconductor substrate exposed to the first hole; forming a side wall from a second insulating film in the first hole to form a second hole; and forming a third impurity diffused layer of the first conduction type in the semiconductor substrate exposed to the second hole. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010197046-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007298561-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6893933-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5986323-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5773349-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7851890-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6319786-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6180442-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6610578-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5654211-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7772060-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6693344-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5915186-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6815303-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6573169-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6255716-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002127814-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6879017-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6492694-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111293170-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003209775-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6504224-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6121158-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6440810-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6818492-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005026381-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8946739-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005023707-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005186773-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7186664-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6323538-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8247323-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3664151-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6541859-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6707130-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7268413-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5789285-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009294783-A1 |
| priorityDate |
1993-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |