| abstract |
A PN junction device is formed by removing an inert film from a surface of an N type semiconductor layer to expose an active face, then applying a source gas containing an P type impurity component to the active face to form an impurity adsorption film, and thereafter carrying out a solid-phase diffusion of the impurity is carried out from a diffusion source composed of the P type impurity adsorption film into the N type semiconductor layer to form therein a P type semiconductor layer to thereby provide a PN junction. Lastly, a pair of electrodes are connected to the respective semiconductor layers to form the an PN junction device. |