| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-906 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
1995-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1996-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73522e142b8ae3924888ccebacd20e41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_094cc49663e085831ddf6afbdaa75395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acc397a89f3b988240a03e9c916c0902 |
| publicationDate |
1996-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5510297-A |
| titleOfInvention |
Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor |
| abstract |
Disclosed is a process for the formation of a tungsten silicide layer on an integrated circuit structure of a semiconductor wafer mounted on a susceptor in a vacuum chamber, wherein the tungsten silicide layer is applied at a temperature of at least 500° C. and the susceptor has an aluminum nitride surface. After the chamber has been cleaned with one or more fluorine-containing etchant gases, the improvement comprises depositing a layer of tungsten silicide on the surface of the susceptor prior to an initial deposition of tungsten silicide on a wafer mounted on the susceptor after cleaning with the fluorine-containing etchant gases. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5728629-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6110556-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5879574-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5834059-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6335280-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005136657-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6090705-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5970383-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006024959-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6573180-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6444037-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6019848-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5599397-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005211264-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5968587-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004007795-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5725673-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6645303-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6090706-A |
| priorityDate |
1993-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |