| abstract |
A multi-source reactive deposition process for preparing a phosphor layer for an AC TFEL device having the chemical formula M II M III 2 X 4 :RE, where M II is a group II metal taken from the group magnesium, calcium, strontium and barium, M III is a group III metal taken from the group aluminum, gallium and indium, X is taken from the group sulfur and selenium, and RE comprises a rare earth activator dopant taken from the group cerium and europium is disclosed. The phosphor film is formed in crystalline form on a substrate heated to a temperature between 400° and 800° C. by depositing more than one deposition source chemical where at least one of the deposition source chemicals of the group II metal or the group III metal is a compound. |