| abstract |
A process for forming an interlayer membrane by chemical vapor deposition comprises the steps of supplying gaseous materials to a reaction chamber in which a wafer to be deposited is installed, supplying a catalyst gas to the reaction chamber separately from but concurrently with the gaseous materials are supplied, and allowing the gaseous materials to react with the catalyst gas adjacent the surface of the wafer to form a membrane being laid on the wafer. The gaseous materials may include at least one organic silicone compound. The catalyst may be selected from water soluble catalysts having basicity, preferably, compounds having amino groups or hydrazine derivatives. The catalyst may be dissolved with water to a solution prior to supply. An apparatus for forming such interlayer membrane by chemical vapor deposition is composed of a reaction chamber in which a semiconductor substrate to be deposited, means for supplying gaseous materials communicated with the reaction chamber to supply the gaseous materials to adjacent the substrate in the reaction chamber, and means for supplying a catalyst communicated with the reaction chamber separately from the means for supplying gaseous materials to separately supply the catalyst to adjacent the substrate in the reaction chamber. |