| abstract |
Triisopropylindium diisopropyltelluride adduct, ((CH3)2CH)3In:Te(CH(CH3)2)2 is synthesized and is used as a universal n-type dopant for both II/VI semiconductor materials as well as III/V semiconductor materials is disclosed. This dopant precursor is particularly suited for indium doping of II/V semiconductor materials at low carrier concentrations down to 1014 cm-3 and does not exhibit an appreciable memory effect. |