| abstract |
In the solid-state image pickup device of the invention, a photodiode is formed on a semiconductor substrate, and a transfer channel is formed at a specific gap to the photodiode. On the semiconductor substrate, a transfer gate electrode formed through a gate dielectric film is provided, and an interlayer film is formed on the transfer gate electrode. Furthermore, a first light-shield film for shielding the transfer channel from light is formed on the interlayer film. On the first light-shield film, a second light-shield film is formed at least through an interlayer dielectric film. In this case, the interlayer dielectric film is composed of multiple layers of at least first interlayer dielectric film and second interlayer dielectric film, and in etching of the interlayer dielectric film, the second interlayer dielectric film is smaller in the etching rate to the first interlayer dielectric film, and the second interlayer dielectric film is formed beneath the first interlayer dielectric film. As a result, by etching, for example, the second light-shield film on the interlayer dielectric film, the reduction of film thickness on the first interlayer dielectric film varies significantly. By such variation of film thickness reduction and owing to necessity of obtaining a specified interlayer dielectric breakdown voltage, the interlayer dielectric film may be reduced in thickness. |