http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5420050-A

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0804
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
filingDate 1993-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1995-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63242a19406297489acb55aa6f66d526
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publicationDate 1995-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5420050-A
titleOfInvention Method of enhancing the current gain of bipolar junction transistors
abstract The present invention teaches a method and structure of enhancing the current gain characteristics of a bipolar junction transistor. The method comprises the step of forming a patterned silicon dioxide layer superjacent a semiconductor substrate comprising a base, an emitter and a collector, such that a carrier current conducts between the base and the emitter. The silicon dioxide layer forms an interface on the substrate at the emitter. Further, a first polysilicon layer is formed superjacent both the patterned silicon dioxide layer and the interface, and is implanted with O 2 . Subsequently, the substrate is heated such that the emitter interface is obstructed by a silicon dioxide formation, thereby blocking a portion of carrier current from passing through the interface.
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priorityDate 1993-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.