| abstract |
A high voltage device (10) having MOS input characteristics. A low voltage MOS transistor (12) is provided which has a source (18), a drain (22), and a gate (25). A high voltage transistor (14) is also provided which has a source (20), a drain (24), and gate (16). The source (18) of the low voltage MOS transistor (12) is connected to the gate (16) of the high voltage transistor (14). The drain (22) of the low voltage MOS transistor (12)is connected to the source (20)of the high voltage transistor The low voltage MOS transistor (12) may have a silicon substrate and the substrate of the high voltage transistor (14)may comprise silicon, silicon carbide, or gallium arsenide. |