| abstract |
A single crystal diamond film having good electrical characteristics is produced by a method which comprises steps of decomposing a raw material gas comprising a hydrogen gas and a carbon-containing compound and epitaxially growing a single crystal diamond film on a single crystal substrate in a vapor phase, wherein a molar ratio of the carbon atoms in the carbon-containing compound to the hydrogen is from 2:100 to 10:100 and a lattice constant of the single crystal substrate satisfies the following relation: |(a-a0)/a|x100</=20(I) wherein a0 is the lattice constant of diamond (3.567 ANGSTROM ) and a is a lattice constant of the single crystal substrate. |