| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_040ec81c891acc3f3186f56cb99cf161 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-01 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66303 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate |
1994-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1994-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d6b62ee54b27332f512ef4bcda6618d |
| publicationDate |
1994-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5376563-A |
| titleOfInvention |
Method of manufacturing an emitter base self alignment structure |
| abstract |
Using a silicon etched technique to remove an implanted base and emitter surrounding emitter-base islands, a "mesa" emitter structure can be formed. Using the structure, a self aligned P+ can be formed around emitter-base islands. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5614424-A |
| priorityDate |
1992-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |