| abstract |
Anionically polymerizable monomers containing at least one silicon or titanium atom form polymeric photoresists having good dry etch resistance for use in microlithography. The monomers are of the formula <IMAGE> I wherein A is -H or -CH=CH2; X is a strong electron withdrawing group; Y is a strong electron withdrawing group containing at least one silicon or titanium atom. Preferably Y is <IMAGE> wherein n is 1-5 and R2, R3 and R4 are C1-C10 alkyl. A particularly preferred monomer is 3-trimethylsilylpropyl 2-cyanoacrylate. Methods for applying a resist coating by vapor deposition of these monomers and exposure to radiation are described. A positive or negative tone image can be produced, depending upon the imaging method employed. The imaging layer may be applied over a planarizing layer to form a multilayer photoresist. |