| abstract |
The deposition of a copper-containing layer on a substrate by decomposing, particularly by a CVD process, a compound corresponding to the formula (I) n n RO--Cu--L (I) n n in which n R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and n L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, n is described, together with previously unknown compounds of formula (I) which may be used in the process. |