| abstract |
A method of providing a conformal layer of TiSi x atop a semiconductor wafer within a chemical vapor deposition reactor includes the following steps: a) positioning a wafer within the reactor; b) injecting selected quantities of gaseous Ti(NR 2 ) 4 precursor, gaseous silane and a carrier gas to within the reactor, where R is selected from the group consisting of H and a carbon containing radical, the quantities of Ti(NR 2 ) 4 precursor and silane being provided in a volumetric ratio of Ti(NR 2 ) 4 to silane of from 1:300 to 1:10, the quantity of carrier gas being from about 50 sccm to about 2000 sccm and comprising at least one noble gas; and c) maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the precursor and silane to deposit a film on the wafer, the film comprising a mixture of TiSi x and TiN, the selected temperature being from about 100° C. to about 500° C., and the selected pressure being from about 150 mTorr to about 100 Torr. |