Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_040ec81c891acc3f3186f56cb99cf161 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05644 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05624 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01011 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-85444 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12043 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01019 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01015 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-85424 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-85455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05155 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10253 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8611 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 |
filingDate |
1992-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
1993-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34c0ff834b80c4a4e07b3ff4d9492eee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fd1e7523113bc3ea6b56aa2f5acf5de |
publicationDate |
1993-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-5236873-A |
titleOfInvention |
Method for contacting a semiconductor component |
abstract |
A metallization layer forming a bonding pad is formed on a diffused region of a semiconductor substrate for making electrical connection to the diffused region. A polysilicon layer of the same conductivity type as the diffused region is formed on the diffused region, overlapping onto sidewalls and peripheral portions of a silicon oxide mask. A two-layer metallization layer comprising a first nickel layer and an overlying gold layer covers the polysilicon layer. The semiconductor device is formed by diffusing an impurity into the upper surface of a semiconductor substrate using a silicon oxide mask. A doped polysilicon layer is formed on the diffused region, overlapping onto sidewall portions and extending up onto the silicon oxide mask layer. The substrate is immersed in a metal-plating electroless bath to form layers of nickel and gold on conductive portions of the substrate including on the polysilicon and on a face of the substrate opposite the polysilicon layer. The substrate is selectively etched to remove contaminants from the silicon oxide mask introduced during immersion in the electroless bath. The device is then annealed at a suitable temperature. With a plurality of devices formed on a single wafer, the wafer is scored and diced to separate the devices for individual packaging. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6779711-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103383917-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103383917-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5716873-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7485500-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004234679-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7081680-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005109496-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007134848-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5583073-A |
priorityDate |
1991-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |