http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5225896-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_42206fe75eab96a992861f84398e420e |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0259 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
filingDate | 1991-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 1993-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e84f6bfe1162201c1fc13b6d66ef0cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e31da509d0f5728bb292782f6c17bb52 |
publicationDate | 1993-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-5225896-A |
titleOfInvention | Protection element and method of manufacturing same |
abstract | A semiconductor device comprises a semiconductor body (1) of silicon having a monolithic integrated circuit with a field oxide pattern (2) having at least one protection element (T2) having at least one active zone (4) of a first conductivity type, which adjoins at least in part the field oxide (2) and forms with the adjoining silicon region (5) of the second opposite conductivity type a pn junction (6). The active zone (4) is contacted with an electrode layer (7), which is connected to a point (G) of the semiconductor device to be protected against static discharge. The electrode layer (7) consists of a metal silicide. According to the invention, the metal silicide (7) also extends onto the field oxide (2) adjoining the active zone (4) over a certain distance, which is preferably at least 0.5 μm. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006228844-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5719428-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5973372-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5828103-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7544553-B2 |
priorityDate | 1989-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.