http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5225896-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0259
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02
filingDate 1991-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1993-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e84f6bfe1162201c1fc13b6d66ef0cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e31da509d0f5728bb292782f6c17bb52
publicationDate 1993-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5225896-A
titleOfInvention Protection element and method of manufacturing same
abstract A semiconductor device comprises a semiconductor body (1) of silicon having a monolithic integrated circuit with a field oxide pattern (2) having at least one protection element (T2) having at least one active zone (4) of a first conductivity type, which adjoins at least in part the field oxide (2) and forms with the adjoining silicon region (5) of the second opposite conductivity type a pn junction (6). The active zone (4) is contacted with an electrode layer (7), which is connected to a point (G) of the semiconductor device to be protected against static discharge. The electrode layer (7) consists of a metal silicide. According to the invention, the metal silicide (7) also extends onto the field oxide (2) adjoining the active zone (4) over a certain distance, which is preferably at least 0.5 μm.
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priorityDate 1989-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 31.