| abstract |
A high energy radiation-sensitive, pattern-forming resist composition comprising a polymer of the formula (I): ##STR1## in which R 1 represents an alkyl groups, cyano group, --CH 2 OH or --CH 2 CO 2 R wherein R represents an alkyl group, R 2 represents a hydrocarbon group containing at least one silicon atom, R 3 represents a group capable of causing crosslinking of the polymer upon application of heat, and m and n each is an integer. The resist composition is particularly useful as a top layer resist of the bi-level resist system, and the exposed top layer resist can be stably developed because of a remarkably increased difference of the solubility in the developer of the exposed and unexposed areas thereof. |