| abstract |
An improved method for manufacturing a semiconductor device is described. In the preferred embodiment, a Gunn diode is manufactured from InP active and buffer layers. The buffer layer is deposited on a GaAs substrate using an epitaxial deposition process and the active layer is deposited onto the buffer layer. Electrical connection to the InP layers is made by etching a via through the GaAs substrate and metallizing the walls of the via. After the device has been placed in its final package, the GaAs substrate material is removed. As a result, good thermal and electrical contact is made to the InP active layer, and therefore, a Gunn diode manufactured according to this invention can reliably produced greater output power. |