| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5de41645f886d763d3f73e3d3fc113cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8381805eba6d034fc77bd230dd02e6e2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-924 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3063 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3063 |
| filingDate |
1991-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1992-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b937417bb547c73a0e50d810dd99a4e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6beecd3ee113f99296ed0e61798fe2e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81e6cb7d5183f1e21c6d2af9b61e0482 |
| publicationDate |
1992-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5129982-A |
| titleOfInvention |
Selective electrochemical etching |
| abstract |
A method of selectively etching a body of a semiconductor material, such as single crystalline silicon, having regions of n-type and p-type conductivity to remove at least a portion of the n-type region. The body is placed in an etching solution of an etchant having a high pH value and a positive voltage is applied between the body and the etchant. This forms passivating layers on the surfaces of the two regions with the passivating layer on the n-type region being different from that on the p-type region. The voltage is then removed and the body is etched for a period long enough to remove all of the passivating layer from the n-type region and at least a portion of the n-type region, but is not long enough to remove all of the passivating layer from the p-type region. This is allowed by the difference between the passivating layers on the two regions. The steps of forming the passivating layers and etching them is repeated until a desired amount of the n-type region is removed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9849376-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5637189-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5464509-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7833405-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6511915-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8759175-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009200598-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004080004-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5946549-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5338416-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5445718-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8658544-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5705027-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011059618-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5674758-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5407868-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5863233-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5865938-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6350393-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8193575-B2 |
| priorityDate |
1991-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |