| abstract |
Phase enhancement by resonant Fabry-Perot picture elements in III-V semiconductor spatial light modulators (SLMs) is disclosed. For 95% reflecting electrodes, a phase modulation of 0.7π rad is found in transmission when the electrooptic input phase is 0.06π rad. A resonant phase-dominant SLM in a 1.7-μm-thick AlGaAs/GaAs multiple quantum well (MQW) structure can employ field effects and carrier-induced electrooptic effects within the MQWs. |