abstract |
Resin compositions for the inner coat of semiconductors which include n (A) 100 parts by weight of a polysiloxane having vinyl groups and having a viscosity of 100 to 800cP at 25° C., said polysiloxane having a general formula ##STR1## in which V represents a vinyl group, Me represents a methyl group, Ph represents a phenyl group, R represents a methyl group or a phenyl group and both k and l represent natural numbers which are variables within the range of 0.01≦l/(k+l)≦0.2, n (B) 1 to 35 parts by weight of a polysiloxane haivng a viscosity of 2 to 500cP at 25° C., said polysiloxane having a general formula ##STR2## in which Me represents a methyl group, and both m and n represent natural numbers which are variables within the range of 0.05≦n/(M+n)≦0.3, n (C) 0.1 to 20% by weight of a organopolysiloxane per total amount of the above-described (A) plus (B), the organopolysiloxane having, per molecule, at least one hydrogen atom bound with a silicon atom and at lest one group having the general formula (R 1 O) 3 SiCH 2 CH 2 -- in which R 1 represents a lower alkyl group or a group R 2 (OCH 2 CH 2 ) p -- in which R 2 represents a methyl group or an ethyl group and p represents a positive number of 3 or less, and n (D) platinum catalyst for the addition reaction are provided. |