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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01P1-15
filingDate 1990-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1992-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_004cd22ab6735bb4a939ab64cb117edf
publicationDate 1992-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5086329-A
titleOfInvention Planar gallium arsenide NPNP microwave switch
abstract A microwave switch is provided for controlling the transmission of microw energy in a microstrip transmission line structure. The microwave switch comprises an electrically conducting ground plane in contact with one side of an undoped semiconductor material having on its other side a superlattice of gallium arsenide consisting of a periodic sequence of p- and n-doped gallium arsenide layers. P- and n-type regions are formed integral with and electrically connected to the superlattice, and first and second microstrip transmission lines are electrically connected to respective ones of the n- and p-type regions.
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