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filingDate 1989-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1991-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d2f2b9af7c930f878eb377215484014
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publicationDate 1991-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5070037-A
titleOfInvention Integrated circuit interconnect having dual dielectric intermediate layer
abstract This invention comprehends a multilevel electrically conductive interconnect for an integrated circuit wherein an inventive feature of the interconnect is the intermediate dual dielectric layer between the non-contacting portions of the surrounding metal conductors. The dual dielectric layer consists of a first dielectric layer and a second dielectric layer preferably formed from a polyimide material. The dual dielectric layer provides a significant improvement in defect density and a substantially planarized surface for the deposition of the top conductor, thereby improving the reliability and integrity of the electrical interconnection and integrated circuit.
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