Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b94d2715cda37c1f23e48f9f4f23422 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2203 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861 |
filingDate |
1990-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
1991-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fb9b04058063b4d48b75dc2d5b8ada6 |
publicationDate |
1991-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-5061973-A |
titleOfInvention |
Semiconductor heterojunction device with graded bandgap |
abstract |
The semiconductor materials of junction forming layers of a heterojunctiontructure are interfaced by a gap region that is graded by degree of alloying of those components of an interfacing material which are respectively compounded in the semiconductor materials of the junction forming layers having different bandgaps and band edges that are aligned by the grading of the interfacing gap region to selectively control rectifying junction characteristics. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5548137-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5610413-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008237481-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5345093-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8232531-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005056829-A1 |
priorityDate |
1990-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |