| abstract |
A semiconductor laser (2) constitutes a monolithic source whose intensity is modulated at a frequency lying in the microwave frequency range, typically 10-20 GHz to 100 GHz. It is based on coupling between the longitudinal modes of the laser, with intensity modulation being given by beats between the various modes of the laser. Optimization and control of the laser are made possible by splitting the optical cavity (6, 8, 10) of the laser into successive sections (20, 22, 24). The invention is particularly suitable for telecommunications applications. |