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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-068
filingDate 1988-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1991-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b73e08be04139aac3e9c4a4407c5fe0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78af5159948e3814c22ec99b7aaff5dc
publicationDate 1991-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4990471-A
titleOfInvention Process for producing silicon nitride
abstract A process for forming silicon nitride containing little or no silicon carbide. The process involves producing a uniform dispersion of finely divided silica particles in a polymer, heating the polymer/silica dispersion in a non-oxidizing atmosphere to carbonize the polymer, and heating the resulting carbonized product to a temperature in the range of 1300 DEG -1800 DEG C. in a non-oxidizing nitrogen-containing atmosphere. This latter heating step is carried out in the presence of a metal oxide (preferably alumina which is capable, in the reaction conditions, of reducing the amount of silicon carbide formed as an undesired by-product.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6528436-B1
priorityDate 1988-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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