| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03C1-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-022 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L61-08 |
| filingDate |
1989-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1991-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f08ea87295ed56b59dae70df070c234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e894e6a63f5bdb743ef7beddc23c5eda
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfaa2d1d8d925f8510f41f6eb967252b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_042dbdedb708cde8839f4a19296a08fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f7dd25f28318bbb719403b5297fe6fc |
| publicationDate |
1991-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-4985333-A |
| titleOfInvention |
Positive-working photosensitive composition with three difference 1,2-naphthoquinone diazide sulfonic acid esters to include the ester of curcumin |
| abstract |
The positive-working photosensitive composition useful as a material of photoresist comprises, in addition to a film-forming resin, such as a cresol novolak resin, and a photosensitive compound, such as an ester of a polyhydroxy benzophenone and 1,2-naphthoquinonediazido-5-sulfonic acid, an esterification product of curcumin with 1,2-naphthoquinone diazide sulfonic acid in a limited amount. The photosensitive composition is outstandingly insusceptible to the adverse influence of halation even when the photoresist layer is formed on a highly reflective aluminum-deposited surface of a substrate without decreasing the photosensitivity of the composition to actinic rays in the photolithographic process for the manufacture of semiconductor devices. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5378586-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5348842-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5376497-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6280910-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5512422-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105777591-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105777591-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5221592-A |
| priorityDate |
1988-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |