| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9d5ebd9bdc11f7a4b267d7e865d5a84f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N1-193 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N1-40056
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N1-1906
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N1-031 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N1-193 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N1-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N1-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N1-031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate |
1988-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1990-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c18dde7b7d0d29d3ef1428bd8b9f0f09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d80d64e115fe5fd90d4f890991ee5497
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0a3de72c6f9d8b4d4b1614ef456fee8 |
| publicationDate |
1990-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-4906856-A |
| titleOfInvention |
Semiconductive photodetection device having coplanar circuit components |
| abstract |
A photoelectric conversion array is comprised of a longitudinal semiconductor substrate formed with a plurality of doped regions electrically isolated from one another and equidistantly aligned in the longitudinal direction of the substrate. Each doped region is comprised of a first region containing therein base, collector and emitter regions arranged to constitute a bipolar phototransistor operative in response to irradiation of incident light onto the base region to induce a photoelectric current between the collector and emitter regions, and a second region disposed adjacent to and laterally of the first region and containing therein a drain region, a source region, a channel region between the drain and source regions and a gate region disposed on the channel region to constitute a MOS switching transistor electrically connected in series to the bipolar phototransistor and selectively operative in response to a control voltage applied to the gate region to enable the induced photoelectric current to flow through the channel region to thereby drive the corresponding bipolar phototransistor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9985057-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9997549-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10020329-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1453099-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017309655-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5262654-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5223728-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004164321-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9735188-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9735189-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1453099-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007210342-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-RE39393-E
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016211291-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5101252-A |
| priorityDate |
1984-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |