patent/US-4894693-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4894693-A

Outgoing Links

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filingDate	1986-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	1990-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e18321048683ff26170336626fc5f6e3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_544ef94ce41f4e89493aa257f4e7ae8a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a21fa502602a61b1f9cdba24c377d7a1
publicationDate	1990-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-4894693-A
titleOfInvention	Single-polysilicon dram device and process
abstract	A new DRAM structure, wherein the top plate of the storage capacitor is provided by a TiN thin film layer 410', and the bottom plate is provided by a polysilicon layer 402' which also provides the gates 402 of the pass transistors.
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priorityDate	1985-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 68.